| 1. | A high impedance coupling device will limit loading .
一个高阻抗的耦合装置将限制负载。 |
| 2. | To achieve the high impedance required specially designed "electrometer" vacuum tubes, field effect transistor must be used in the input stage .
为适应高阻抗需要，仪器输入电路中须用特殊设计的静电计专用电子管、场效应晶体管。 |
| 3. | 2pf high impedance probe
高阻抗探头 |
| 4. | Probe , and one high impedance probe - are all matched to the 50 inputs of
一个是磁场探头，一个是电场探头，还有一个是高阻抗探头。 |
| 5. | This choke must be large in value , and provides a relatively high impedance at audio frequencies
这一扼流圈必须有足够大的容量，并能在音频内提供相对高的感抗。 |
| 6. | The probe is of very high impedance near the insulation resistance of the printed circuit material and is loading the test point with only 2 pf 80 at 1 ghz
接近印制电路板材料的绝缘电阻，并且在测试点仅载入 |
| 7. | The complementary high impedance iutputs are suitable for driving transmission lines directly or connecting a omp to bring low impedance outputs
互补的高阻抗电流输出适合直接驱动传输线或带一个外部运算放大器以产生低阻抗输出电压。 |
| 8. | Parallel rlc . 2 complex poles . presents high impedance ( r ) at resonance which is at 1 / ( 2 * pi * sqrt ( l * c ) ) . impedance decreases away from resonance
并联电阻电感电容。可获得两个复杂的极点。在谐振点获得高阻抗，然后离谐振点越远阻抗越低。 |
| 9. | Two design plans and structure charactristic of high impedance transformer are introduced . its charactristics are compared . its structure is analyzed
摘要介绍了高阻抗变压器的结构特点及两种结构的设计，并对其进行了性能比较和结构分析。 |
| 10. | Then based on this theoretical model , the dissertation gives a structure of high impedance surface which is not uniform
之后,在理论模型的基础上给出了一种非均匀高阻抗表面的结构,数值仿真表明这种非均匀高阻抗表面确实优于均匀高阻抗表面。 |
